On a detail examination of frequency and voltage dependence of dielectric, electric modulus, ac conductivity (σ<i><sub>ac</sub></i>) of the Al/DLC/p-Si structures between 2 kHz and 1 MHz
E. Balci, Aylar Feizollahi Vahid, B. Avar, Semsettin Altindal
article (Uluslararası, Hakemli) | Yazar(lar): E. Balci, Aylar Feizollahi Vahid, B. Avar, Semsettin Altindal | Yıl: 2024 | Dergi/Kurum: PHYSICA B-CONDENSED MATTER | İndeks: WOS.SCI | DOI: 10.1016/j.physb.2024.416576 | Anahtar Kelimeler: DLC interlayer, Frequency dependent dielectric properties, Surface states, Polarizat
In this study, the frequency/voltage dependent profiles of the real/imaginary parts of the complex-dielectric (epsilon ', epsilon"), electric-modulus (M ', M"), impedance (Z ', Z"), loss-tangent (tan delta), ac electrical-conductivity (sigma ac) and phase-angle (theta) were investigated in the frequency and voltage ranges of 2kHz/1 MHz and -2V/4V, respectively. The increase in epsilon ' and epsilon" values with decreasing frequency is attributed to surface-states (Nss), surface/dipole-polarizations at the diamond-like carbon (DLC)/Si interface. This behavior of epsilon ' and epsilon" is known as Maxwell-Wagner type polarization. The M''-V plot has clear peak for each frequency and its position shifts from -0.6V (at 2 kHz) to 1.65V (at 1 MHz) due to the relaxation process and Nss at low-mid frequencies. Values of epsilon ' and epsilon" changed from 16.27 to 8.12 and 456.93 to 8.73 for 3V in the range of 2 kHz and 1 MHz, respectively. Therefore, the fabricated Al/DLC/p-Si can be used as an alternative to insulators for further electronic-charging/energy-storage.