The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures
Aylar Feizollahi Vahid, S. Alptekin, N. Basman, M. Ulusoy, Y. Safak Asar, Semsettin Altindal
article (Uluslararası, Hakemli) | Yazar(lar): Aylar Feizollahi Vahid, S. Alptekin, N. Basman, M. Ulusoy, Y. Safak Asar, Semsettin Altindal | Yıl: 2023 | Dergi/Kurum: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | İndeks: WOS.SCI | DOI: 10.1007/s10854-023-10546-z — Özet: In order to perform metal-interlayer-sem
In order to perform metal-interlayer-semiconductor (MIS) Schottky diodes (SDs) with a greater barrier height (BH), various materials are used at M/S interface as interlayer. Here, the interlayer material's characteristics are crucial, notably the need for characteristics like substrate adhesion, thermal-stability, and low-resistance. Due to its exceptional qualities, diamond-like carbon (DLC), one of the favored materials, was chosen in this investigation. To create the Al/(Cu-DLC)/ p-Si/Au MIS type SD in this case, a copper-doped diamond-like carbon (CuDLC) nanocomposite film was electrochemically formed as an interlayer. Scanning electron microscopy (SEM) was also used to evaluate the electrode posited (Cu-DLC) film. The impedance spectroscopy (IS) technique was used to analyze the real-imaginary components of complex dielectric (epsilon', epsilon'') and electric modulus (M', M''), tangent-loss (tan delta) and ac electrical conductivity (sigma(ac)) in wide range of frequency (3 kHz-3 MHz) and voltage (+/- 4.0 V). All these parameters derived from the impedance-measurements were found strong function of frequency and voltage at low-moderate frequencies due to a unique distribution of surface states (N-ss) at (Cu-DLC)/p-Si interface and interfacial/dipole polarizations. As frequency rises, M' and M'', values rise while epsilon' and epsilon'' values decrease.