Effect of a new methacrylic monomer on diode parameters of Ag/p-Si Schottky contact
N. Basman, Rukiye Uzun, Ramazan Ozcakir, Ibrahim Erol, G. Cankaya, Orhan Uzun
article (Uluslararası, Hakemli) | Yazar(lar): N. Basman, Rukiye Uzun, Ramazan Ozcakir, Ibrahim Erol, G. Cankaya, Orhan Uzun | Yıl: 2016 | Dergi/Kurum: INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | İndeks: WOS.SCI | Anahtar Kelimeler: Schottky diode, electrical characterization, met
1-[4-(prop-2-yn-1-yloxy) phenyl] ethanone-O-methacryloyloxime (POEMO) is a new methacrylic monomer with side chain alkyne. In this study, Ag/POEMO/p-Si Schottky metal-interlayer-semiconductor (MIS) diode was fabricated and its diode parameters were investigated. Using the forward bias current-voltage (I-V) characteristic, the ideality factor and barrier height of the MIS structure were found as 2.81 and 0.70 eV, respectively. The barrier height value of 0.70 eV obtained for Ag/POEMO/p-Si MIS diode was higher than the value of 0.64 of conventional Ag/p-Si Schottky diode. Cheung-Cheung and Norde methods were also used to extract ideality factor, barrier height and series resistance values, and the obtained results were compared.